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Si1022R
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = 10 μA
V DS = V GS , I D = 0.25 mA
60
1
2.5
V
V DS = 0 V, V GS = ± 10 V
± 150
Gate-Body Leakage
Zero Gate Voltage Drain Current
I GSS
I DSS
T J = 85 °C
V DS = 0 V, V GS = ± 5 V
V DS = 50 V, V GS = 0 V
T J = 85 °C
V DS = 60 V, V GS = 0 V
± 500
± 20
10
100
1
nA
μA
On-State Drain Current a
I D(on)
V DS = 10 V, V GS = 4.5 V
V DS = 7.5 V, V GS = 10 V
500
800
mA
V GS = 4.5 V, I D = 200 mA
3.0
Drain-Source On-State Resistance a
R DS(on)
T J = 125 °C
V GS = 10 V, I D = 500 mA
5.0
1.25
?
T J = 125 °C
2.25
Forward Transconductance
a
g fs
V DS = 10 V, I D = 200 mA
100
mS
Diode Forward
Voltage a
V SD
V GS = 0 V, I S = 200 mA
1.3
V
Dynamic b
Input Capacitance
C iss
30
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
C oss
C rss
Q g
V DS = 25 V, V GS = 0 V, f = 1 MHz
V DS = 10 V, I D = 250 mA, V GS = 4.5 V
6
2.5
0.6
pF
nC
Switching b, c
Turn-On Time
Turn-Off Time
t (on)
t (off)
V DD = 30 V, R L = 150 ? ,
I D = 200 mA, V GEN = 10 V, R g = 10 ?
25
35
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
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